PART |
Description |
Maker |
IRFNG50 |
POWER MOSFET N-CHANNEL(BVdss=1000V, Rds(on)=2.0ohm, Id=5.5A) 功率MOSFET N沟道BVdss \u003d 1000V的的Rds(on)\u003d 2.0ohm,身份证\u003d 5.5A
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International Rectifier, Corp. IRF[International Rectifier]
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IRFU1N60A IRFR1N60A IRFR1N60ATR IRFR1N60ATRL IRFR1 |
600V Single N-Channel HEXFET Power MOSFET in a D-Pak package 600V Single N-Channel HEXFET Power MOSFET in a I-Pak package SMPS MOSFET Power MOSFET(Vdss=600V, Rds(on)max=7.0ohm, Id=1.4A)
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IRF[International Rectifier]
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JANTXV2N6800 JANTX2N6800 |
POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=1.0ohm, Id=3.0A)
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IRF[International Rectifier]
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IRF820 IRF820PBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.5A) Power MOSFET(Vdss=500V/ Rds(on)=3.0ohm/ Id=2.5A)
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IRF[International Rectifier]
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IRFR420 IRFU420 IRFU420PBF |
500V Single N-Channel HEXFET Power MOSFET in a I-Pak package Power MOSFET(Vdss=500V Rds(on)=3.0ohm Id=2.4A) Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.4A)
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IRF[International Rectifier]
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SSW4N60B SSI4N60B SSI4N60BTU SSW4N60BTM |
600V N-Channel MOSFET 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 600V N-Channel B-FET / Substitute of SSI4N60A 600V N-Channel B-FET / Substitute of SSW4N60A
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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HGT1S12N60A4S HGTG12N60A4 HGTP12N60A4 FN4656 HGT1S |
600V, SMPS Series N-Channel IGBT From old datasheet system 600V/ SMPS Series N-Channel IGBT 600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N沟道绝缘栅双极型晶体 54 A, 600 V, N-CHANNEL IGBT, TO-247 600V, SMPS Series N-Channel IGBT(600V,SMPS系列 N沟道绝缘栅双极型晶体 54 A, 600 V, N-CHANNEL IGBT, TO-263AB 600V, SMPS Series N-Channel IGBT 54 A, 600 V, N-CHANNEL IGBT, TO-220AB
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INTERSIL[Intersil Corporation] Intersil, Corp. Fairchild Semiconductor, Corp.
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STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩ Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH N-CHANNEL 3A - 600V D2PAK Power MESH IGBT N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
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ST Microelectronics STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
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FCA16N60N |
600V N-Channel MOSFET SupreMOS™; 3-TO-3PN 16 A, 600 V, 0.199 ohm, N-CHANNEL, Si, POWER, MOSFET N-Channel MOSFET 600V, 16A, 0.170W
|
Fairchild Semiconductor, Corp.
|
FQT1N60C FQT1N60CTF-WS |
N-Channel QFETMOSFET 600V, 0.2A, 11.5 N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ohm
|
Fairchild Semiconductor
|
IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 600V Single N-Channel HEXFET Power MOSFET in a TO-262 package HEXFET? Power MOSFET Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A) 600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电 Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6A
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IRF[International Rectifier] International Rectifier, Corp.
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FCP9N60N FCPF9N60NT |
N-Channel MOSFET 600V, 9A, 0.385Ω N-Channel MOSFET 600V, 9A, 0.385惟 N-Channel MOSFET 600V, 9A, 0.385楼?
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Fairchild Semiconductor
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